HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc

The HMC903LP3E is a GaAs pHEMT MMIC (Gallium Arsenide Pseudomorphic High-Electron-Mobility Transistor Monolithic Microwave Integrated Circuit) Low Noise Amplifier (LNA) from Analog Devices Inc. It operates over a broad frequency range of 6 GHz to 17 GHz and is housed in a compact, 3x3 mm, 16-lead QFN (Quad Flat No-leads) surface-mount package.

This self-biased amplifier is designed for high-frequency applications requiring low noise, high gain, and excellent linearity.

The HMC903LP3E is designed for high-frequency microwave systems where low noise and high linearity are critical:

1. Point-to-Point & Point-to-Multipoint Radio Links:

   • Used in microwave backhaul radios for cellular infrastructure and data links due to its wide bandwidth and high performance.

2. Military, Aerospace, and Space Systems:

   • Employed in electronic warfare (EW), radar systems, and satellite communications (SATCOM/VSAT) due to its robustness and performance across a wide temperature range.

3. Test and Measurement Equipment:

   • Ideal for signal generators, spectrum analyzers, and network analyzers as a low-noise gain stage.

4. Local Oscillator (LO) Driver:

   • The +14.5 dBm P1dB output power makes it suitable for driving balanced, I/Q, or image-rejection mixers.

• Low Noise Figure (1.7 dB): Essential for maintaining high signal integrity and sensitivity in receiver front-ends.

• High Linearity (OIP3 = +25 dBm): Minimizes intermodulation distortion in dense signal environments.

• High Integration and Ease of Use: The self-biasing architecture and internal 50-ohm matching on both input and output simplify design and reduce external component count. The DC-blocked I/O ports further enhance design simplicity15.

• Compact Form Factor: The small 3x3 mm QFN package is suitable for high-density PCB designs common in modern RF systems.

• Wide Bandwidth: Covers multiple microwave bands (C, X, Ku) with a single component, offering design flexibility.